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BS62LV1027TCP55 参数 Datasheet PDF下载

BS62LV1027TCP55图片预览
型号: BS62LV1027TCP55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 128K ×8位 [Very Low Power CMOS SRAM 128K X 8 bit]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 372 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS62LV1027
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
READ CYCLE 2
(1,3,4)
CE1
t
ACS1
CE2
t
CLZ
(5)
t
ACS2
t
CHZ1
, t
CHZ2
(5)
t
AA
t
OH
D
OUT
READ CYCLE 3
(1, 4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE1
t
CLZ1
(5)
CE2
t
OLZ
t
ACS1
t
CHZ1
(1,5)
t
OHZ
(5)
t
OH
t
ACS2
t
CLZ2
(5)
t
CHZ2
(2,5)
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH
.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS62LV1027
5
Revision
2.4
Oct.
2008