BS62UV2006
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
NAME
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Guaranteed Input Low
Voltage(2)
--
--
--
--
0.6
0.8
VIL
-0.3(5)
V
Guaranteed Input High
1.4
2.0
VIH
IIL
Vcc+0.3
1
V
Voltage(2)
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
uA
Vcc = Max, CE1 = VIH or CE2=VIL
or OE = VIH, VI/O = 0V to Vcc
ILO
--
--
1
uA
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc = Max, IOL = 0.1mA
Vcc = Max, IOL = 2.0mA
Vcc = Min, IOH = -0.1mA
Vcc = Min, IOH = -1.0mA
--
--
--
--
--
--
0.2
0.4
--
VOL
VOH
Output Low Voltage
Output High Voltage
V
V
Vcc-0.2
2.4
--
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
--
--
--
--
--
--
--
10
13
Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH
ICC
mA
mA
Current
I
= 0mA, F = Fmax(3)
DQ
Vcc = Max, CE1 = VIH or
CE2=VIL
--
0.1
0.5
3.0
ICCSB
Standby Current-TTL
--
I
DQ = 0mA
0.20
Vcc = Max, CE1≧Vcc-0.2V or
CE2≦0.2V ;VIN≧ Vcc - 0.2V or
(4)
ICCSB1
Standby Current-CMOS
uA
Vcc=3.0V
--
0.30
5.0
V
IN≦0.2V
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
4. IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC. 5. VIL = -1.5V for pulse width less than 30ns.
.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.0
--
--
V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.1
1.0
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.0V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR is 0.7uA at TA=70oC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.0V
V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.0V
V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 1.1
R0201-BS62UV2006
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
