CM2021
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
I
CC5
I
CC3
I
OFF
I
BACKDRIVE
PARAMETER
Operating Supply Current
Bias Supply Current
OFF state leakage current,
level shifting NFET
Current conducted from output
pins to V_SUPPLY rails when
powered down
CONDITIONS
5V_SUPPLY = 5.0V
3.3V_SUPPLY = 3.3V
3.3V_SUPPLY = 0V
5V_SUPPLY
<
V
CH_OUT
;
Signal pins: TMDS_[2:0]+/-,
TMDS_CK+/-, CE_REMOTE_OUT,
DDC_DAT_OUT, DDC_CLK_OUT,
HOTPLUG_DET_OUT Only
3.3V_SUPPLY = 2.5V, V
S
= GND,
I
DS
= 3mA
I
F
= 8mA, T
A
= 25°C, Note 2
75
MIN
TYP
110
1
0.1
0.1
MAX
130
5
5
5
UNITS
µA
µA
µA
µA
V
ON
V
F
VOLTAGE drop across level
shifting NFET when ON
Diode Forward Voltage
Top Diode
Bottom Diode
ESD Withstand Voltage (IEC)
95
140
mV
0.6
0.6
0.85
0.85
0.95
0.95
V
V
kV
V
ESD
Pins 4, 7,10,13, 20, 21, 22, 23, 24,
27, 30, 33;
Notes 2 and 3
Pins 1, 2, 16, 17, 18, 19, 37;
Notes 2 and 4
T
A
= 25°C, Notes 2 and 4
±
8
±
2
V
ESD
V
CL
ESD Withstand Voltage
(HBM)
Channel Clamp Voltage @
8kV HBM ESD
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
TMDS Channel Leakage Cur-
rent
TMDS Channel Input
Capacitance
C
IN
Matching Capacitance
kV
9.0
-9.0
I = 1A, T
A
= 25°C, Note 5
3.0
1.5
0.01
0.9
1
1.2
V
V
Ω
Ω
µA
pF
R
DYN
I
LEAK
C
IN,
TMDS
T
A
= 25°C, Note 2
5V_SUPPLY = 5.0V,
Measured at 1MHz,
V
BIAS
=2.5V, Note 2
5V_SUPPLY = 5.0V,
Measured at 1MHz,
V
BIAS
=2.5V, Note 2, 6
5V_SUPPLY= 0V,
Measured at 1MHz,
V
BIAS
=2.5V, Note 2
5V_SUPPLY = 0V,
Measured at 100KHz,
V
BIAS
=2.5V, Note 2
∆
C
IN,
TMDS
C
MUTUAL
0.05
pF
Mutual Capacitance between
signal pin and NC pin
Level Shifting Input Capaci-
tance, Capacitance to GND
0.07
pF
C
IN,
DDC
3.5
4
pF
©
2005 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
03/22/05
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
