CSPEMI307A
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
600
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
R
C
TCR
TCC
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Capacitance
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off frequency
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω
At 2.5V DC
I
DIODE
=10µA
V
DIODE
=3.3V
I
LOAD
= 10mA
5.6
-0.4
Notes 2,4 and 5
±30
±15
Notes 2,3,4 and 5
+10
-5
R = 100Ω, C = 30pF
64
V
V
MHz
kV
kV
6.8
-0.8
9.0
-1.5
V
V
5.5
100
At 2.5V DC
CONDITIONS
MIN
80
24
TYP
100
30
1200
-300
MAX
120
36
UNITS
Ω
pF
ppm/°C
ppm/°C
V
nA
V
ESD
V
CL
f
C
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A2,
then clamping voltage is measured at Pin C2.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
© 2003 California Micro Devices Corp. All rights reserved.
10/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
3