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PACUSB-D1Y5 参数 Datasheet PDF下载

PACUSB-D1Y5图片预览
型号: PACUSB-D1Y5
PDF下载: 下载PDF文件 查看货源
内容描述: USB下行端口终结者 [USB Downstream Port Terminator]
分类和应用: LTE
文件页数/大小: 9 页 / 315 K
品牌: CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
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PACUSB-D1/D2/D3
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
R1
R1
R1
R2
TCR
C1
TOL
CM
I
LEAK
V
RB
V
SIG
PARAMETER
Resistance of R1 Resistor
(PACUSB-D2Y5/Y5R, -D2YB5/YB5R)
Resistance of R1 Resistor
(PACUSB-D3Y5/Y5R, -D3YB5/YB5R)
Resistance of R1 Resistor
(PACUSB-D1Y5/Y5R, -D1YB5/YB5R)
Resistance of R2 Resistor
CONDITIONS
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
MIN
12
17.6
26.4
TYP
15
22
33
15
+1300
37.6
25.6
47
32
1
5.5
5.6
-0.4
+4
+20
+15
12
-7
6.8
-0.8
9.0
-1.5
56.4
38.4
+2
100
MAX
18
26.4
39.6
UNITS
Ω
Ω
Ω
ppm/
°C
pF
pF
%
nA
V
V
V
kV
kV
kV
V
V
Temperature Coefficient of Resistance Note 1
Capacitance of C1 Capacitor
Matching Tolerance of C1 Capacitors
Diode Leakage Current to GND
Diode Reverse Bias Voltage
Signal Voltage:
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
MIL-STD-883D, Method 3015
(HBM)
IEC 61000-4-2 Contact Discharge
Pins 1, 3; Notes 2,3 and 4
Pins 4, 5; Notes 2 and 3
Pins 4, 5; Notes 2 and 3
MIL-STD-883D, Method 3015
+8kV; Notes 2 and 5
MIL-STD-883D, Method 3015 -
8kV; Notes 2 and 5
0 VDC; 30 mVAC; 1MHz; 25°C
2.5 VDC; 30 mVAC; 1MHz; 25°C
1MHz; 25°C
Measured at 3.3 VDC, 25°C
I
LOAD
= 10μA; T
A
= 25°C
I
LOAD
= 10mA; T
A
= 25°C
I
LOAD
= 10mA; T
A
= 25°C
V
ESD
V
CL
Clamping voltage under ESD
discharge
Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise.
Guaranteed by design and characterization.
ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,
they do not require the high ESD protection levels provided for pins 4 and 5.
Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).
Note 1:
Note 2:
Note 3:
Note 4:
©
2004 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
09/14/04