CAT34WC02
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias
–55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(1)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-up
Min.
1,000,000
100
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
V
CC
= +1.8V to +6.0V, unless otherwise specified.
Limits
Symbol
I
CC
I
CC
I
SB(5)
I
LI
I
LO
V
IL
V
IH
V
OL1
V
OL2
Parameter
Power Supply Current (Read)
Power Supply Current (Write)
Standby Current (V
CC
= 5.0V)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (V
CC
= 3.0V)
Output Low Voltage (V
CC
= 1.8V)
–1
V
CC
x 0.7
Min.
Typ.
Max.
1
3
0
1
1
V
CC
x 0.3
V
CC
+ 1.0
0.4
0.5
Units
mA
mA
µA
µA
µA
V
V
V
V
I
OL
= 3 mA
I
OL
= 1.5 mA
Test Conditions
f
SCL
= 100 KHz
f
SCL
= 100 KHz
V
IN
= GND or V
CC
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(3)
C
IN(3)
Test
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
Max.
8
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+ 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
(5) Standby Current (I
SB
) = 0µA (<900nA).
Doc. No. 1003, Rev. A
2
CATALYST [ CATALYST SEMICONDUCTOR ]
