CAT5114
OPERATION MODES
¯¯¯
INC
High to Low
High to Low
High
Low
X
¯¯
CS
Low
Low
Low to High
Low to High
High
¯
U/D
High
Low
X
X
X
R
H
Operation
Wiper toward H
Wiper toward L
Store Wiper Position
No Store, Return to Standby
Standby
C
H
R
WI
R
W
C
W
C
L
R
L
Potentiometer
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
Parameters
Supply Voltage
V
CC
to GND
Inputs
¯¯
CS to GND
¯¯¯
INC to GND
¯
U/D to GND
H to GND
L to GND
W to GND
Ratings
-0.5 to +7V
Units
V
V
V
V
V
V
V
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
Parameters
Operating Ambient Temperature
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10s max)
Ratings
-40 to +85
+150
-65 to 150
+300
Units
ºC
ºC
ºC
ºC
RELIABILITY CHARACTERISTICS
Symbol
V
ZAP (2)
I
LTH (2)(3)
T
DR
N
END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
Min
2000
100
100
1,000,000
Typ
Max
Units
V
mA
Years
Stores
DC ELECTRICAL CHARACTERISTICS
V
CC
= +2.5V to +6V unless otherwise specified
Power Supply
Symbol
V
CC
I
CC1
I
CC2
I
SB1(3)
Parameter
Operating Voltage Range
Supply Current (Increment)
Supply Current (Write)
Supply Current (Standby)
V
CC
= 6V, f = 1MHz, I
W
= 0
V
CC
= 6V, f = 250kHz, I
W
= 0
Programming, V
CC
= 6V
V
CC
= 3V
¯¯
CS = V
CC
- 0.3V
¯ ¯¯¯
U/D, INC = V
CC
- 0.3V or GND
Conditions
Min
2.5
–
–
–
–
–
Typ
–
–
–
–
–
–
Max
6.0
100
50
1000
500
1
Units
V
µA
µA
µA
µA
µA
Notes
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to V
CC
+ 1V.
(4) I
W
= source or sink.
(5) These parameters are periodically sampled and are not 100% tested.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. MD-2007 Rev. O
CATALYST [ CATALYST SEMICONDUCTOR ]
