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CAT6217-280TD-GT3 参数 Datasheet PDF下载

CAT6217-280TD-GT3图片预览
型号: CAT6217-280TD-GT3
PDF下载: 下载PDF文件 查看货源
内容描述: 150毫安CMOS LDO稳压器 [150mA CMOS LDO Regulator]
分类和应用: 稳压器
文件页数/大小: 10 页 / 268 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT6217
PIN DESCRIPTIONS
Pin # Name Function
1
VIN Supply voltage input.
2
GND Ground reference.
Enable input (active high); a 2.5MΩ
3
EN
pull-down resistor is provided.
Optional bypass capacitor connection
4
BYP for noise reduction and PSRR
enhancing.
5 VOUT LDO Output Voltage.
BLOCK DIAGRAM
VIN
V
IN
EN
LDO
VOUT
V
OUT
BYP
Reference
Shutdown
Switch
GND
Figure 2. CAT6217 Functional Block Diagram
PIN FUNCTION
VIN
is the supply pin for the LDO. A small 1μF
ceramic bypass capacitor is required between the V
IN
pin and ground near the device. When using longer
connections to the power supply, C
IN
value can be
increased without limit. The operating input voltage
range is from 2.3V to 5.5V.
EN
is the enable control logic (active high) for the regulator
output. It has a 2.5MΩ pull-down resistor, which
assures that if EN pin is left open, the circuit is disabled.
VOUT
is the LDO regulator output. A small 1μF
ceramic bypass capacitor is required between the V
OUT
pin and ground for stability. For better transient
response, its value can be increased to 4.7μF.
The capacitor should be located near the device. ESR
domain is 5mΩ to 500mΩ. V
OUT
can deliver a
maximum guaranteed current of 150mA. A 250Ω
internal shutdown switch discharges the output
capacitor in the no-load condition.
GND
is the ground reference for the LDO. The pin
must be connected to the ground plane on the PCB.
BYP
is the reference bypass pin. An optional 0.01μF
capacitor can be connected between BYP pin and
GND to reduce the output noise and enhance the
PSRR at high frequency.
ABSOLUTE MAXIMUM RATINGS
Parameter
V
IN
V
EN
, V
OUT
Junction Temperature, T
J
Power Dissipation, P
D
Storage Temperature Range, T
S
Lead Temperature (soldering, 5 sec.)
ESD Rating (Human Body Model)
Rating
0 to 6.5
-0.3 to V
IN
+0.3
+150
Internally Limited
-65 to +150
260
3
Unit
V
V
°C
mW
°C
°C
kV
RECOMMENDED OPERATING CONDITIONS
Parameter
V
IN
V
EN
Junction Temperature Range, T
J
Package Thermal Resistance (SOT23-5),
θ
JA
Range
2.3 to 5.5
0 to V
IN
-40 to +125
235
Unit
V
V
°C
°C/W
Typical application circuit with external components is shown on page 1.
Notes:
(1) Exceeding maximum rating may damage the device
(2) The maximum allowable power dissipation at any T
A
(ambient temperature) is P
Dmax
= (T
Jmax
– T
A
)/θ
JA
. Exceeding the maximum allowable
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.
(3) The device is not guaranteed to work outside its operating rating.
Doc. No. MD-10011 Rev. D
2
©
Catalyst Semiconductor, Inc.
Characteristics subject to change without notice