CMBTA55
CMBTA56
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Storage temperature
Junction temperature
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th t–s
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
T
j
CMBT A55
max. 60
max. 60
max.
max.
max.
–55
max.
A56
80 V
80 V
4
V
500
mA
250
mW
to +150
°C
150
°C
R
th j–a
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
CMBTA55
–V
(BR)CEO
min. 60
–I
C
= 1 mA; I
B
= 0
Emitter–base breakdown voltage
–V
(BR)EBO
min.
–I
C
= 0; I
E
= 100
µA
Collector cut–off current
–I
CEO
max.
–V
CE
= 60 V; I
B
= 0
–I
CBO
max. 0.1
–V
CB
= 60 V; I
E
= 0
–I
CBO
max.
–V
CB
= 80 V; I
E
= 0
Saturation voltages
–V
CEsat
max.
–I
C
= 100 mA; –I
B
= 10 mA
Base–emitter On voltage
–V
BE(on)
max.
–I
C
= 100 mA; –V
CE
= 1 V
D.C. current gain
h
FE
min.
–I
C
= 10 mA; –V
CE
= 1 V
h
FE
min.
–I
C
= 100 mA; –V
CE
= 1 V
Transition frequency at f = 100 MHz
f
T
min.
–I
C
= 100 mA; –V
CE
= 1 V
A56
80 V
4
0.1
V
µA
-
µA
0.1
µA
V
V
0.25
1.2
100
100
50
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
CDIL [ Continental Device India Limited ]
