NE6510179A
NONLINEAR MODEL
SCHEMATIC
LGX
GATE
0.001 nH
0.75 nH
LG
Q1
RDX
0.2 ohms
RDBX
400 ohms
LD
0.65 nH
LDX
0.01 nH
DRAIN
CGS PKG
0.1 pF
CBSX
100 pF
CDS PKG
0.1 pF
RSX
0.05 ohms
LSX
0.001 nH
SOURCE
FET NONLINEAR MODEL PARAMETERS
(1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
(2)
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
(3)
CGDO
(4)
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
Q1
-0.756
0
2
2.245
0
0.01
1.7
0
0.6
1e-16
1
0
0
10e-12
0.5e-12
0.001
0
20e-12
4e-12
0.3
0.2
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
0.05
0.001
0.001
0
0
1
27
3
1.43
0
0
1
MODEL RANGE
Frequency: 0.5 to 4 GHz
Bias:
V
DS
= 2.2 V to 5 V, I
D
= 150 mA to 300 mA
Date:
3/29/2000
DELTA1
DELTA2
FC
VBR
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
GAMMA
(3) CGSO
CGS
(4) CGDO
CGD
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
CEL [ CALIFORNIA EASTERN LABS ]
