NE856 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
NE85600
NE85618
NE85619
NE85630
NE85632
EIAJ
1
REGISTERED NUMBER
2SC5011
2SC5006
2SC4226
2SC3355
PACKAGE OUTLINE
00 (CHIP)
18
19
30
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
GHz
7.0
6.5
6.5
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
GHz
3.0 4.5
4.5
NF
Noise Figure at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
1.1
1.4
1.4
1.3
1.4
dB
2.1
2.1
2.2
2.2
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
G
A
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
f = 2 GHz
2
at
Forward Current Gain
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance
3
at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (J-A)
dB
dB
dB
dB
13
7
11
7
9
50
13
7
120 300
80
μA
μA
pF
pF
mW
°C/W
1.0
1.0
1.0
1.0
0.7
0.5
1.0
700
0.5
0.9
150
833
100
1000
150
833
120 160
1.0
1.0
1.5
0.7
40
110 250
1.0
1.0
1.5
0.65 1.0
600
210
1.0
1.0
12.5
6.5
12
12
6
12
6
50
10
10
|S
21E
|
2
9.5
h
FE
50 120 300
120 300
I
CBO
I
EBO
C
re
P
T
R
TH (J-A)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 20 mA
Noise Figure at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
f = 2 GHz
2
at
Forward Current Gain
V
CE
= 10 V, I
C
= 20 mA
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0
mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance
3
at
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (J to A)
NE85633
NE85634
2SC3356
2SC3357
33
34
MIN TYP MAX MIN TYP MAX
7.0
1.4
2.0
6.5
1.4
2.1
9
10
11.5
9.5
7
50
μA
μA
pF
mW
°C/W
0.55
120
300
1.0
1.0
1.0
200
625
0.65
50
120
300
1.0
1.0
1.0
2000
4
62.5
4
0.5
50
9
120
300
1.0
1.0
1.0
580
590
0.5
50
3.4
13.5
8.5
13
7
120
300
1.0
1.0
0.9
200
500
NE85635
NE85639/39R
2SC3603
2SC4093
35
39
MIN TYP MAX MIN TYP MAX
7.0
9.0
1.5
2.1
SYMBOLS
f
T
NF
UNITS
GHz
dB
dB
dB
dB
dB
dB
G
A
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
re
P
T
R
TH (J-A)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width
≤
350
μs,
duty cycle
≤
2% pulsed.
3. C
re
measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm
2
x 0.7 mm ceramic substrate (infinite heatsink).
CEL [ CALIFORNIA EASTERN LABS ]
