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NE85635 参数 Datasheet PDF下载

NE85635图片预览
型号: NE85635
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管放大器
文件页数/大小: 26 页 / 828 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE856 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
20
12
3.0
100
150
2
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in
permanent damage.
2. Maximum T
J
for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
2.4
NE85634
Ceramic Substrate
2.5 cm
2
X 0.7 mm
R
TH (J-A)
= 62.5˚C/W
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation, P
T
(mW)
Total Power Dissipation, P
T
(W)
2.0
Aluminum
Heat Sink
for NE85632
300
NE85635
200
1.6
10
1.2
7.8
3.8
NE85633
100
0.8
NE85632
Free Air
NE85632
with Heat
Sink
0.4
NE85634
Free Air
0
0
50
100
150
200
0
0
50
100
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
V
CE
= 10 V
Collector to Base Capacitance, C
OB
(pF)
5.0
2.0
DC Forward Current Gain, h
FE
3.0
300
200
1.0
0.7
0.5
0.3
0.2
NE85634
100
70
50
30
20
NE85632/
33
NE85635
0.1
1
2
3
5
7
10
20
30
50
10
1
2
3
5
7
10
20
30
50
Collector to Base Voltage, V
CB
(V)
Collector Current, I
C
(mA)