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NESG2031M05-T1 参数 Datasheet PDF下载

NESG2031M05-T1图片预览
型号: NESG2031M05-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 13 页 / 788 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2031M05
TYPICAL PERFORMANCE CURVES
(T
A
= 25ºC)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
V
CE
= 2 V
f = 5 GHz
25
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
30
30
V
CE
= 3 V
f = 1 GHz
25
MSG
20
20
|S
21e
|
2
15
MAG
15
10
|S
21e
|
2
10
5
5
0
1
10
100
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
30
V
CE
= 3 V
f = 3 GHz
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
V
CE
= 3 V
f = 2 GHz
25
MSG
MAG
25
MSG
20
MAG
20
2
15
|S
21e
|
15
|S
21e
|
10
2
10
5
5
0
1
10
100
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
30
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
50
V
CE
= 3 V, f = 1 GHz
I
cq
= 20 mA (RF OFF)
15
40
V
CE
= 3 V
f = 5 GHz
20
P
out
10
30
15
MAG
5
I
C
20
10
|S
21e
|
2
5
0
10
0
1
10
100
-5
-30
-25
-20
-15
-10
0
-5
Collector Current, I
C
(mA)
Input Power, P
in
(dBm)
Collector Current, I
C
(mA)
Output Power, P
out
(dBm)
25