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NESG2031M05-T1 参数 Datasheet PDF下载

NESG2031M05-T1图片预览
型号: NESG2031M05-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 13 页 / 788 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2031M05
TYPICAL PERFORMANCE CURVES
(T
A
= 25ºC)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
V
CE
= 3 V, f = 2 GHz
I
cq
= 20 mA (RF OFF)
50
20
V
CE
= 3 V, f = 3 GHz
I
cq
= 20 mA (RF OFF)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
50
Collector Current, I
C
(mA)
Output Power, P
out
(dBm)
Output Power, P
out
(dBm)
15
15
P
out
40
P
out
10
30
10
30
5
20
5
I
C
20
I
C
0
10
0
10
-5
-25
-20
-15
-10
-5
0
0
-5
-20
-15
-10
-5
0
0
5
Input Power, P
in
(dBm)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
V
CE
= 3 V, f = 5.2 GHz
I
cq
= 20 mA (RF OFF)
50
Input Power, P
in
(dBm)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
Output Power, P
out
(dBm)
15
P
out
10
4
20
30
3
15
5
I
C
20
2
10
0
10
1
NF
5
V
CE
= 1 V
f = 1 GHz
0
100
-5
-15
-10
-5
0
5
0
10
0
1
10
Input Power, P
in
(dBm)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
Collector Current, I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
30
G
a
Associated Gain, G
a
(dB)
4
20
4
G
a
20
3
15
3
15
2
10
2
10
1
5
1
5
NF
0
1
10
V
CE
= 2 V
f = 1 GHz
0
100
NF
0
1
10
V
CE
= 1 V
f = 2 GHz
0
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Associated Gain, G
a
(dB)
5
25
5
25
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Associated Gain, G
a
(dB)
40
Collector Current, I
C
(mA)
5
G
a
25
Noise Figure, NF (dB)
Collector Current, I
C
(mA)
40