UPA895TD
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
2
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
RATINGS
Q1
9
5.5
1.5
100
Q2
9
1.5
100
5.5
6
V
CE
= 2 V
f = 2 GHz
5
15
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
4
G
a
3
12
mW 190 for 1 element
210 for 2 elements
°C
150
150
°C
-65 to +150
9
2
NF
6
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm
2
x 1.0 mm(t) glass epoxy substrate.
1
3
0
1
10
0
100
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance, C
re
(pF)
300
1.0
f = 1 MHz
Total Power Dissipation, P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
250
210
190
180
0.8
200
2 Elements
0.6
150
0.4
100
1 Element
50
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature, T
A
(°C)
Collector to Base Voltage, V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current, I
C
(mA)
1
Collector Current, I
C
(mA)
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
Associated Gain, G
a
(dB)
Noise Figure, NF (dB)
CEL [ CALIFORNIA EASTERN LABS ]
