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UPA895TD-T3-A 参数 Datasheet PDF下载

UPA895TD-T3-A图片预览
型号: UPA895TD-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频晶体管晶体管 [NPN SILICON RF TWIN TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 11 页 / 234 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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UPA895TD  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
35  
20  
15  
10  
5
V
CE = 1 V  
V
CE = 2 V  
MSG  
MAG  
f = 1 GHz  
I
C = 5 mA  
30  
25  
20  
15  
10  
5
MSG  
2
MAG  
|S21e  
|
2
|S21e  
|
0
0.1  
0
1
10  
100  
1
10  
Frequency, f (GHz)  
Collector Current, IC (mA)  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
15  
10  
5
15  
10  
5
V
CE = 1 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
MAG  
MAG  
2
|S21e  
|
2
|S21e  
|
0
0
-5  
-5  
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
6
5
4
3
2
1
0
18  
15  
12  
9
6
5
4
3
2
1
0
18  
V
CE = 1 V  
V
CE = 1 V  
f = 2 GHz  
f = 1 GHz  
15  
12  
9
G
a
G
a
6
6
NF  
NF  
3
3
0
100  
0
100  
1
10  
1
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)