2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ft
VCE=10V, IC=500mA, f=1.0MHz
6.0
28
Cob
VCB=10V, IE=0, f=1.0MHz
125
500
Is/b
VCE=100V, t=1.0s
0.2
Resistive Load
td
VCC=250V, IC=10A,
tr
IB1=IB2=2.0A, tp=100μs,
ts
Duty Cycle≤2.0%
tf
Inductive Load (Clamped)
ts
VCL=Rated VCEX, IC=10A,
tf
IB1=2.0A, VBE=5.0V, TC=100°C
ts
tf
VCL=Rated VCEX, IC=10A,
IB1=2.0A, VBE=5.0V, TC=25°C
2.0
0.9
0.05
1.0
4.0
0.7
UNITS
MHz
pF
A
μs
μs
μs
μs
5.0
1.5
μs
μs
μs
μs
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2 (12-December 2011)
w w w. c e n t r a l s e m i . c o m
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
