CED05N65/CEU05N65
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
b
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
2.5
2
Min
650
25
100
-100
4.5
2.4
Typ
Max
Units
V
µA
4
nA
nA
V
Ω
Gate Threshold Voltage
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
DS
= 10V, I
D
= 2A
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
3
570
105
20
23
13
35
11
8.3
3
3.1
4
46
26
70
22
11
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
V
DD
= 300V, I
D
= 4A,
V
GS
= 10V, R
GEN
= 25Ω
V
DS
= 480V, I
D
= 4A,
V
GS
= 10V
Drain-Source Diode Characteristics and Maximun Ratings
V
GS
= 0V, I
S
= 4A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
2
CET [ CHINO-EXCEL TECHNOLOGY ]
