CED05N65/CEU05N65
6
9
V
GS
=10,8,7V
7.5
6
4.5
3
1.5
0
25 C
T
J
=125C
1
2
3
4
-55 C
5
6
I
D
, Drain Current (A)
4
3
2
V
GS
=5V
1
0
0.0
5
10
15
20
25
30
I
D
, Drain Current (A)
5
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600
400
200
0
Coss
Crss
0
5
10
15
20
25
Ciss
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=2A
V
GS
=10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
S
, Source-drain current (A)
I
D
=250µA
10
0
-25
0
25
50
75
100
125
150
10-1
0.4
0.7
1.0
1.3
1.7
2.0
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
