CED6861/CEU6861
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
c
b
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= -1.3A
V
DS
= -30V, I
D
= -3.5A,
V
GS
= -10V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -60V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
=-4.8A
V
DS
= -10V, I
D
= -12A
V
DS
= -30V, V
GS
= 0V,
f = 1.0 MHz
-1
110
155
9
885
85
80
12
4
38
12
11
2.4
1.6
-12
-1.2
24
8
76
24
15
Min
-60
-1
100
-100
-3
132
195
Typ
Max
Units
V
µA
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
6
Gate Threshold Voltage
Forward Transconductance
V
DD
= -30V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
