CED6861/CEU6861
20
25
-I
D
, Drain Current (A)
12
8
4
0
-I
D
, Drain Current (A)
16
-V
GS
=10,8V
20
15
10
25 C
5
0
T
J
=125 C
0
1
2
3
-55 C
4
5
6
-V
GS
=4V
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
750
500
250
0
Crss
0
5
10
Coss
15
20
25
30
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=-6A
V
GS
=-10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
10
2
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
V
GS
=0V
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=-250µA
10
1
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
