CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 6A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by T
J(max)
and thermal response
E
AS
θ
JC
θ
JA
T
L
180
1.0
62.5
260
℃
℃/W
T
J
, T
STG
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
125
45
-55 to 150
℃
mJ
Value
6.0
18
±20
±40
V
V
W
Unit
A
ORDERING INFORMATION
Part Number
CMT06N60N220
CMT06N60N220FP
Package
TO-220
TO-220FP
TEST CIRCUIT
Test Circuit – Avalanche Capability
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 2
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
