CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT06N60
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 3.5A) *
Forward Transconductance (V
DS
= 15 V, I
D
= 3.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 6.0 A,
V
GS
= 10 V,
R
G
= 9.1Ω) *
(V
DS
= 300 V, I
D
= 6.0 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
100
50
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
3.4
1498
158
29
14
19
40
26
35.5
8.1
14.1
4.5
7.5
2100
220
60
30
40
80
55
50
2.0
100
100
4.0
1.2
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
600
Typ
Max
Units
V
μA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 6.0 A,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
0.83
**
266
1.2
V
ns
ns
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 3
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
