CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ORDERING INFORMATION
Part Number
CMT08N50GN220*
CMT08N50GN220FP*
CMT08N50XN220*
Package
TO-220
TO-220 Full Package
TO-220
CMT08N50XN220FP*
TO-220 Full Package
*Note :
G : Suffix for PB Free Product
X : Suffix for Halogen Free and PB Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT08N50
Typ
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 500 V, V
GS
= 0 V)
(V
DS
= 400 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 30 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -30 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 4.0A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 8.0 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 4.0A) *
Input Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
(R
Go
+ C17n = 9.1Ω) *
Turn-Off Delay Time
Fall Time
Total Gate Charge
(V
DS
= 400 V, I
D
= 8.0 A,
Gate-Source Charge
V
GS
= 10 V)*
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(I
S
= 8.0 A, V
GS
= 0 V,
Forward Turn-On Time
d
IS
/d
t
= 100A/μs)
Reverse Recovery Time
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
Symbol
V
(BR)DSS
I
DSS
Min
500
Max
Units
V
μA
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
4.9
1450
190
45.4
15
33
40
32
40
8.0
17
4.5
7.5
2.0
1
3
100
100
4.0
0.7
7.2
nA
nA
V
Ω
V
mmhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
5.0
V
SD
t
on
t
rr
1.5
35
75
V
ns
ns
2009/07/28
Rev. 1.2
Champion Microelectronic Corporation
Page 2
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
