RATING CHARACTERISTIC ( CH867UPNPT )
LIMITING VALUES of TR2( NPN Transistor )
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
50
UNIT
−
−
−
−
−
−
−
−
V
V
V
V
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-base voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
50
open emitter
open collector
50
7
150
200
30
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb ≤ 25 °C; note 1
200
+150
150
+150
−55
−
°C
Tamb
−55
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
Note
PARAMETER
CONDITIONS
VALUE
415
UNIT
thermal resistance from junction to ambient
note 1
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS of TR1( PNP Transistor )
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
−
ICBO
=
collector cut-off current
IE 0; VCB = 50 V
−
-0.1
-50
uA
uA
uA
IC = 0; VCB = 50 V; TA = 125 OC
−
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = - 6 V
−
-0.1
400
-400
IC = -2.0 mA; VCE = -6.0V; note 1
120
−
−
VCEsat
collector-emitter saturation
voltage
=
IC -100 mA ; IB = -10 mA
-200
mV
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB =-10V; f = 1 MHz
−
−
4.0
5.0
pF
IC = -1mA; VCE = -10V ;
f = 100 MHz
120
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Y:120~240; G:200~400
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