RATING CHARACTERISTIC ( CH867UPNPT )
CHARACTERISTICS
of TR2 ( NPN Transistor )
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. h
FE
: Y:120~240; G:200~400
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= -50 V
I
C
= 0; V
CB
= -50 V; T
A
= 125
O
C
I
C
= 0; V
EB
= 6 V
I
C
= 2.0 mA; V
CE
= 6.0V; note 1
I
C
= 100 mA ; I
B
= 10 mA
I
E
= i
e
= 0; V
CB
= 10V ; f = 1 MHz
I
C
= 1 mA; V
CE
= 10V ;
f = 100 MHz
−
−
−
120
−
−
−
MIN.
−
−
−
−
100
2.0
150
TYP.
MAX.
0.1
50
0.1
400
300
3.5
−
mV
pF
MHz
UNIT
uA
uA
uA
RATING CHARACTERISTIC CURVES ( CH867UPNPT )
CHARACTERISTIC CURVES of Tr1 ( PNP Transistor )
V
CESAT
-
COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
400
300
25
°
C
200
100
0
0.01
- 40
°
C
125
°
C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0. 25
0.2
125
°
C
0. 15
0.1
0.0 5
0.1
25
°
C
- 40
°
C
1
10
I
C
- COLLECTOR CURRENT (mA)
100
β
= 10
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
