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CHM2362PT 参数 Datasheet PDF下载

CHM2362PT图片预览
型号: CHM2362PT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 331 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号CHM2362PT的Datasheet PDF文件第1页浏览型号CHM2362PT的Datasheet PDF文件第2页  
RATING CHARACTERISTIC CURVES ( CHM2362PT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
25
7.5
Figure 2. Transfer Characteristics
V
G S =1 0 , 8 , 6 , 5 V
20
6
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
15
T
J
=25°C
4.5
V
G S =4 V
10
3
5
T
J
=125°C
1.5
T
J
=-55°C
0
0
1.0
4.0
2.0
3.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5.0
0
0
2.0
1.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
3.0
Figure 3. Gate Charge
10
V
DS
=30V
I
D
=3A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=3A
1.9
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0
0
5
10
Q
g
, TOTAL GATE CHARGE (nC)
15
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150