NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019
Min
-
-
-
80
140
7
50
30
90
40
100
40
50
30
15
40
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
10
10
10
-
-
-
-
100
-
120
300
120
-
100
-
-
0.2
0.5
1.1
Unit
nA
µA
nA
V
V
V
I
CBO
I
EBO
V
CEO
V
CBO
V
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
CB
=950 V
I
E
=0
Collector Cutoff Current
V
CB
=90 V, I
E
=0
T
j
=150°C
V
EB
=5 V
Emitter Cutoff Current
I
C
=0
Collector Emitter Breakdown I
C
=10 mA
Voltage
I
B
=0
Collector Base Breakdown
I
C
=100 µA
Voltage
I
E
=0
Emitter Base Breakdown
I
E
=100 µA
Voltage
I
C
=0
I
C
=0.1 mA
V
CE
=10 V
I
C
=10 mA
V
CE
=10 V
I
C
=150 mA
V
CE
=10 V
DC Current Gain (*)
I
C
=500 mA
V
CE
=10 V
I
C
=1 A
V
CE
=10 V
I
C
=150 mA
V
CE
=10 V
T
amb
= -55°C
I
C
=150 mA
Collector-Emitter saturation I
B
=15 mA
Voltage (*)
I
C
=500 mA
I
B
=50 mA
Base-Emitter saturation
I
C
=150 mA
I
B
=15 mA
Voltage (*)
-
V
16/10/2012
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
