2N3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
BV
CER
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
V
BE
h
fe
f
αe
V
CER(SUS)
I
s/b
Ratings
Test Condition(s)
Min
60
70
-
-
-
20
-
-
15
10
60
1.95
Typ
-
-
-
-
-
-
-
1.8
-
-
-
-
Max
-
-
0.7
5.0
5.0
70
1.1
-
120
-
-
-
Unit
V
V
MA
mA
mA
Collector-Emitter Sustaining Voltage
I
C
=200 mA, I
B
=0
(*)
Collector-Emitter Breakdown
I
C
=200 mA, R
BE
=100Ω
Voltage (*)
Collector-Emitter Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter saturation Voltage
Base-Emitter Voltage
Small Signal Current Gain
Small Signal Current Gain Cutoff
Frequency
Collector-Emitter Sustaining Voltage
C
VE
=30 V, I
B
=0
V
CE
=100 V, V
EB(off)
=1.5 V
V
BE
=7.0 V, I
C
=0
I
C
=4.0 A, I
B
=4.0 Adc
I
C
=4.0 A, I
B
=0.4 2Adc
I
C
=4.0 A, V
CE
=4.0 V
V
CE
=4.0 V, I
C
=1.0 A
f=1.0 kHz
V
CE
=4.0 V, I
C
=1.0 A
f=1.0 kHz
I
C
=0.2 A, I
B
=0 A
V
V
-
kHz
V
A
R
BE
= 100Ω
t=1 S (non repetitive)
Second Breakdown Collector
Current
In accordance with JEDEC Registration Data
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
31/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
