NPN 2N6253 – 2N6254 – 2N6371
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
Ratings
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Sustaining
Voltage (*)
R
BE
=100Ω
Base-Emitter Voltage (*)
Test Condition(s)
I
C
=0.2 A, I
B
=0 A
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
Min
45
80
40
55
85
45
55
90
50
-
-
-
20
3
20
5
15
4
10
-
-
800
2.55
1.87
2.9
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
-
-
-
1.7
1.5
4
70
-
70
-
60
-
-
-
-
-
-
-
-
Unit
V
V
CER(SUS)
I
C
=0.2 mA
V
V
CEV(SUS)
I
C
=0.1 A
V
BE
=-1.5 V
V
CE
=4 V, I
C
=3 A
V
CE
=2 V, I
C
=5 A
V
CE
=4 V, I
C
=16 A
V
CE
=4 V, I
C
=3 A
V
CE
=4 V, I
C
=15 A
V
CE
=2 V, I
C
=5 A
V
CE
=4 V, I
C
=15 A
V
CE
=4 V, I
C
=8 A
V
CE
=4 V, I
C
=16 A
V
CE
=4 V, I
C
=1 A
f=1 kHz
V
CE
=4 V, I
C
=1 A
V
CE
=45 V
V
CE
=40 V
V
V
BE
Base-Emitter Voltage (*)
V
h
FE
Static Forward Current
transfer ratio (*)
-
h
fe
Small Signal Current Gain
-
f
T
Transition Frequency
Second Breakdown
Collector Current
tp=1s, non rep.
kHz
I
s/b
A
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
09/11/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
