PNP BD684 TO3 (Temporary part number)
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0 , V
CB
= - 140 V
Min
-
-
-
-
-
-
750
-
-
10
-
-
-0,8
-
-
Typ
-
-
-
-
-
2000
-
750
-
-
60
-1,5
-
0,8
4,5
Max
-0,2
Unit
I
CBO
I
CEO
I
EBO
V
CE(SAT)
h
FE
V
BE
h
fe
f
hfe
V
F
I
(SB)
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter
saturation Voltage (*)
DC Current Gain (*)
Base-Emitter Voltage (*)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
collector current
Turn-on time
Turn-off time
I
E
=0 , V
CB
= -1/2V
CBOMAX
T
j
= 150°C
I
B
=0 , V
CE
= -1/2V
CEOMAX
I
C
=0, V
EB
=-5 V
I
C
=-1.5 A, I
B
=-6 Ma
V
CE
=-3 V, I
C
=-500 mA
V
CE
=-3 V, I
C
=-1,5 A
V
CE
=-3 V, I
C
=-4 A
V
CE
=-3 V, I
C
=-1,5 A
V
CE
=-3 V, I
C
=-1,5 A, f= 1 MHz
V
CE
=-3 V, I
C
=-1,5 A
I
F
=-1,5 A
V
CE
=-50 V, t
P
= 20ms,non rep.
without heatsink
-I
con
= -1,5A, I
bon
= -I
boff
= -6mA
V
CC
=30V
mA
-1
-0,2
-5
-2
-
-
-
-2,5
-
-
-
-
2
8
mA
mA
V
V
kHz
V
A
µs
t
on
t
off
(*)
Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
Temporary datasheet
23/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
