PNP BD684 TO3 (Temporary part number)
SILICON DARLINGTON POWER
TRANSISTORS
PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
They are mounted in Jedec TO-3 metal package.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
-V
CEO
-V
CBO
-V
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
Ratings
Value
140
140
5
-I
C
-I
CM
-I
BM
@ T
mb
= 25°C
4
6
0.1
Unit
V
V
V
A
A
Watts
°C
°C
-I
C
-I
B
P
T
T
J
T
Stg
65
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
R
thJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
K/W
K/W
Temporary data sheet
COMSET SEMICONDUCTORS
1