PNP BD684 TO3 (Temporary part number)
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
IE=0 , -VCB= -VCEOMAX=140 V
IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150°C
IB=0 , -VCE= -1/2VCEOMAX=70 V
IC=0, -VEB=5 V
-
-
-
-
-
-
-
-
0,2
1
0,2
5
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
mA
-ICBO
mA
mA
-ICEO
-IEBO
-IC=1.5 A, -IB=6 Ma
-
-
2
V
-VCE(SAT)
-VCE=3 V, -IC=500 mA
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=4 A
-
2000
-
-
-
DC Current Gain
750
-
-
10
-
-
-
750
-
hFE
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=1,5 A, f= 1 MHz
-VCE=3 V, -IC=1,5 A
IF=1,5 A
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
collector current
Turn-on time
2,5
V
-VBE
hfe
fhfe
VF
-
-
-
-
60
1,5
kHz
V
-VCE=50 V, tP= 20ms,non rep., without
heatsink (BD676 ; VCE=40 V )
0,8
-
-
A
-I(SB)
-
-
0,8
4,5
2
8
ton
toff
-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V
µs
Turn-off time
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Temporary data sheet
2
COMSET SEMICONDUCTORS
COMSET [ COMSET SEMICONDUCTOR ]
