SEMICONDUCTORS
BD909 – BD911
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
Symbol
Ratings
Test Condition(s)
Min Typ Max
I
CBO
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Saturation Voltage (*)
Base-Emitter Voltage
(*)
DC Current Gain (*)
DC Current Gain (*)
DC Current Gain (*)
Transition Frequency
BD909
BD911
BD909
T
J
= 150°C
BD911
BD909
BD911
BD909
V
EB
= 5 V, I
C
= 0
BD911
BD909
I
B
= 0, I
C
= 0.1 A
BD911
BD909
I
C
= 5 A, I
B
= 500 mA
BD911
BD909
I
C
=10 A, I
B
= 2.5 A
BD911
BD909
I
C
=10 A, I
B
= 2.5 A
BD911
BD909
I
C
= 5A, V
CE
= 4 V
BD911
BD909
I
C
= 0.5A, V
CE
= 4 V
BD911
BD909
I
C
= 5A, V
CE
= 4 V
BD911
BD909
I
C
= 10A, V
CE
= 4 V
BD911
BD909
I
C
= 0.5A, V
CE
= 4 V
BD911
T
J
= 25°C
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 80 V
V
CB
= 100 V
V
CE
= 40 V
V
CE
= 50 V
-
-
-
-
80
100
-
-
-
-
40
15
5
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
mA
5
1
1
-
-
1
V
3
2.5
1.5
250
150
-
-
MHz
-
V
V
mA
mA
V
Unit
I
CEO
I
EBO
V
CE0sust
V
CE(SAT)
V
BE(SAT)
V
BE
h
FE
h
FE
h
FE
f
T
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
1.5%
25/09/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
