SEMICONDUCTORS
BDT63-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Value
Unit
I
B
Base Current
250
mA
P
T
Power Dissipation
@ T
mb
< 25°
90
W
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Value
Unit
R
thJ-MB
From junction to mounting base
1.39
K/W
R
thJ-A
From junction to ambient in free air
70
K/W
26/09/2012
COMSET SEMICONDUCTORS
2|5