SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Min
Typ
Max
Unit
V
BE(on)
Base-Emitter Voltage
I
C
= 3 A, V
CE
= 3 V
(*)
-
-
2.5
V
V
CE
= 3.0 V, I
C
= 3 A
h
FE
DC Current Gain (*)
V
CE
= 3.0 V, I
C
= 10 A
1000
-
-
-
-
3000
-
V
ECF
C-E Diode Forward
Voltage
I
F
= 3 A
-
-
2
V
C
OB
Output Capacitance
I
E
= 0, V
CB
= 10 V
f
test
= 1MHz
-
100
-
pF
SWITCHING TIMES
Symbol
t
on
t
off
Ratings
turn-on time
turn-off time
Test Condition(s)
I
C
= 3 A , V
CC
= 10 V
I
B1
= -I
B2
= 12 mA
Min
-
-
Typ
1
5
Max
2.5
10
Unit
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
COMSET [ COMSET SEMICONDUCTOR ]
