ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
Min Typ Mx Unit
60
80
100
-
-
-
-
-
-
3.0
mA
-
-
-
-
V
V
CEO
Collector-Emitter Voltage (*)
I
C
=100 mAdc, I
B
=0
V
CE
=30 Vdc, I
B
=0
I
CEO
Collector Cutoff Current
V
CE
=40 Vdc, I
B
=0
V
CE
=50 Vdc, I
B
=0
I
EBO
Emitter Cutoff Current
V
BE
=5.0 V, I
C
=0
-
-
5.0
mA
V
CB
=60 V, R
BE
=1.0 k ohm
V
CB
=80 V, R
BE
=1.0 k ohm
-
-
-
-
1.0
I
CER
Collector-Emitter Leakage
Current
V
CB
=100 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1.0 k ohm,
T
C
=150°C
V
CB
=80 V, R
BE
=1.0 k ohm,
T
C
=150°C
V
CB
=100 V, R
BE
=1.0 k ohm,
T
C
=150°C
mAdc
-
-
-
-
5.0
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=10 A, I
B
=40 mAdc
Vdc
-
-
2.5
Page 3 of 4
COMSET [ COMSET SEMICONDUCTOR ]
