SEMICONDUCTORS
NPN TIP130 – 131 – 132
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
I
C
= 30 mA
I
B
= 0
V
CB
= V
CEO
I
E
= 0
V
CB
= V
CEO
I
E
= 0
T
C
=100°C
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
EB
= 5 V
I
C
= 0
I
C
= 4A
I
B
= 16 mA
I
C
= 6 A
I
B
= 30 mA
V
CE
= 4 V
I
C
= 4 A
V
CE
= 4 V
I
C
= 1 A
V
CE
= 4 V
I
C
= 4 A
V
CB
=10 V
I
E
=0
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
Min
60
80
100
-
-
-
-
-
-
-
-
-
-
-
-
-
500
1000
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.2
0.2
0.2
1
1
1
0.5
0.5
0.5
5
2
Unit
V
I
CBO
Collector-Emitter sustaining
Current
mA
I
CEO
Collector-Emitter Cutoff
Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Forward Current transfer
ratio (*)
Output Capacitance
A
mA
I
EBO
V
CE(SAT)
V
3
2.5
-
1500
0
200
-
V
V
BE
h
FE
C
OBO
pF
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
30/10/2012
09/11/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
