Huajing Discrete Devices
Silicon
General Description
：
CS2N60FB9D,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
R
○
N-Channel
Power MOSFET
CS2N60FB9D
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
1.5
24
7.0
V
A
W
Ω
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge
(Typical Data:7.5nC)
Low Reverse transfer capacitances
(Typical:5.0pF)
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
1.5
0.85
6.0
±30
80
8
1.3
5.0
24
0.19
1500
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
V
ESD(G-S)
T
J
，T
stg
T
L
150，–55 to 150
300
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℃
℃
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W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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