PRELIMINARY
CGH4000
0 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40010 ideal for linear and compressed amplifier circuits.
The transistor is available in both screw-down, flange and solder-
down, pill packages.
Package Typ
es: 440166
, & 440196
PN’s: CGH4
0010F & CG
H40010P
FEATURES
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Up to 4 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
14 dB Small Signal Gain at 4.0 GHz
13 W typical P
3dB
65 % Efficiency at P3dB
28 V Operation
APPLICATIONS
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2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
ril 2007
Rev .4 – Ap
Subject to change without notice.
www.cree.com/wireless
CREE [ CREE, INC ]
