欢迎访问ic37.com |
会员登录 免费注册
发布采购

CGH40010 参数 Datasheet PDF下载

CGH40010图片预览
型号: CGH40010
PDF下载: 下载PDF文件 查看货源
内容描述: 10 W,射频功率氮化镓HEMT [10 W, RF Power GaN HEMT]
分类和应用: 射频
文件页数/大小: 12 页 / 945 K
品牌: CREE [ CREE, INC ]
 浏览型号CGH40010的Datasheet PDF文件第1页浏览型号CGH40010的Datasheet PDF文件第3页浏览型号CGH40010的Datasheet PDF文件第4页浏览型号CGH40010的Datasheet PDF文件第5页浏览型号CGH40010的Datasheet PDF文件第6页浏览型号CGH40010的Datasheet PDF文件第7页浏览型号CGH40010的Datasheet PDF文件第8页浏览型号CGH40010的Datasheet PDF文件第9页  
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case
1
Symbol
V
DSS
V
GS
T
STG
T
J
I
GMAX
T
S
R
θJC
Rating
84
-10, +2
-55, +150
175
4.0
245
5.0
Units
Volts
Volts
˚C
˚C
mA
˚C
˚C/W
Note:
1
Measured for the CGH40010F at P
DISS
= 14 W.
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
4
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
Case Operating Temperature
Screw Torque
V
GS(th)
V
GS(Q)
I
DS
V
BR
T
C
T
-3.0
2.4
84
-10
-2.5
-2.0
2.7
100
-1.8
+105
60
VDC
VDC
A
VDC
˚C
in-oz
Reference 440166 Package Revision 3
V
DS
= 10 V, I
D
= 3.6 mA
V
DS
= 28 V, I
D
= 200 mA
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 3.6 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics (T
C
= 25
˚
C, F
0
= 3.7 GHz unless otherwise noted)
Small Signal Gain
Power Output at 3 dB
Compression
Drain Efficiency
1,2
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
C
GS
C
DS
C
GD
5.00
1.32
0.43
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
G
SS
P
3dB
η
13.5
10
55
14.5
12.5
65
TBD
dB
W
%
Y
V
DD
= 28 V, I
DQ
= 200 mA
V
DD
= 28 V, I
DQ
= 200 mA
V
DD
= 28 V, I
DQ
= 200 mA, P
3dB
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 200 mA,
P
OUT
= 12 W CW
VSWR
Notes:
1
Drain Efficiency = P
OUT
/ P
DC
2
When tuned for best efficiency (see the applications chart in this data sheet).
3
When tuned for best P
1dB
(see the applications chart in this data sheet).
4
Measured on wafer prior to packaging.
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
2
CGH4000 Rev .4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless