PRELIMINARY
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40045, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40045 ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
Package Typ
es: 440193
PN: CGH400
45F
FEATURES
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Up to 4 GHz Operation
>16 dB Small Signal Gain at 2.0 GHz
12 dB Small Signal Gain at 4.0 GHz
55 W Typical P
3dB
55 % Efficiency at P3dB
28 V Operation
APPLICATIONS
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2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
rch 2007
Rev . – Ma
Subject to change without notice.
www.cree.com/wireless
CREE [ CREE, INC ]
