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CGH40045 参数 Datasheet PDF下载

CGH40045图片预览
型号: CGH40045
PDF下载: 下载PDF文件 查看货源
内容描述: 45 W,射频功率氮化镓HEMT [45 W, RF Power GaN HEMT]
分类和应用: 射频
文件页数/大小: 12 页 / 982 K
品牌: CREE [ CREE, INC ]
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Typical Performance
Simulated Maximum Stable Gain, Maximum Available
Gain and K Factor of the CGH40045F
V
DD
= 28 V, I
DQ
= 800 mA
30
1.5
25
MSG, MAG (dB)
1.13
K Factor
20
0.75
15
0.375
10
0.5
1.5
2.5
Frequency (GHz)
3.5
4.5
0
Single Tone CW Gain, Efficiency, and Output Power vs Input Power of
the CGH40045F measured in Amplifier Circuit CGH40045F-TB
V
DD
= 28 V, I
DQ
= 800 mA, Freq = 3.6 GHz
13
60
12
50
Gain
Drain Efficiency (%)
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
11
40
Gain (dB)
10
P
OUT
30
9
20
8
Efficiency
10
7
0
5
10
15
0
Input Power
20
25
30
35
40
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
3
CGH40045 Rev . Preliminary