CY62256V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.6V, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Com’l
Ind’l
Auto
t
CDR[6]
t
R[6]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
t
RC
Conditions
[6]
Min.
1.4
0.1
3
6
50
ns
ns
Typ.
[2]
Max.
Unit
V
µA
Data Retention Waveform
DATA RETENTION MODE
V
CC
CE
1.8V
t
CDR
V
DR
> 1.4V
1.8V
t
R
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
SOIC
68.45
26.94
TSOPI
87.62
23.73
RTSOPI
87.62
23.73
Unit
°C/W
°C/W
Thermal Resistance
Still Air, soldered on a 3 × 4.5 inch,
(Junction to Ambient)
[6]
four-layer printed circuit board
Thermal Resistance
(Junction to Case)
[5]
Notes:
6. No input may exceed V
CC
+ 0.3V.
Document #: 38-05057 Rev. *D
Page 5 of 13
CYPRESS [ CYPRESS SEMICONDUCTOR ]
