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CY62256-70SNC 参数 Datasheet PDF下载

CY62256-70SNC图片预览
型号: CY62256-70SNC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 395 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62256
Thermal Resistance
Description
Thermal Resistance
(Junction to Ambient)
[5]
Thermal Resistance
(Junction to Case)
[5]
Test Conditions
Still Air, soldered on a 4.25 x 1.125
inch, 4-layer printed circuit board
Symbol
Θ
JA
Θ
JC
DIP
75.61
43.12
SOIC
76.56
36.07
TSOP
93.89
24.64
RTSOP
93.89
24.64
Unit
°C/W
°C/W
AC Test Loads and Waveforms
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
R2
990Ω
R1 1800
R1 1800
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
R2
990Ω
3.0V
GND
10%
ALL INPUT PULSES
90%
90%
10%
< 5 ns
< 5 ns
(a)
(b)
THÉ
VENIN EQUIVALENT
639Ω
OUTPUT
1.77V
Data Retention Characteristics
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
L
LL
LL - Ind’l
LL - Auto
t
CDR[5]
t
R[5]
Chip Deselect to Data Retention Time
Operation Recovery Time
0
t
RC
V
CC
= 3.0V, CE > V
CC
0.3V,
V
IN
> V
CC
0.3V, or V
IN
< 0.3V
Conditions
[6]
Min.
2.0
2
0.1
0.1
0.1
50
5
10
10
Typ.
[2]
Max.
Unit
V
µA
µA
µA
µA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
CE
3.0V
t
CDR
V
DR
> 2V
3.0V
t
R
Notes:
6. No input may exceed V
CC
+ 0.5V.
Document #: 38-05248 Rev. *C
Page 4 of 12