CY7C1399
Electrical Characteristics
Over the Operating Range(continued)
7C1399–25
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
I
SB1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
Output Short Circuit
Current
[2]
V
CC
Operating
Supply Current
Automatic CE Power-Down
Current — TTL Inputs
Automatic CE Power-Down
Current — CMOS Inputs
[3]
GND
≤
V
I
≤
V
CC
,
Output Disabled
V
CC
= Max., V
OUT
= GND
V
CC
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE
≥
V
IH
,
V
IN
≥
V
IH
, or V
IN
≤
V
IL
,
f = f
MAX
Max. V
CC
, CE
≥
V
CC
–0.3V, V
IN
≥
V
CC
– 0.3V, or V
IN
≤
0.3V,
WE≥V
CC
–0.3V or WE≤ 0.3V,
f=f
MAX
L
Test Conditions
V
CC
= Min., I
OH
= –2.0 mA
V
CC
= Min., I
OL
= 4.0 mA
2.2
–0.3
–1
–5
Min.
2.4
0.4
V
CC
+0.3V
0.8
+1
+5
–300
45
5
3
500
L
50
2.2
–0.3
–1
–5
Max.
7C1399–35
Min.
2.4
0.4
V
CC
+0.3V
0.8
+1
+5
–300
40
5
3
500
50
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
µA
µA
I
SB2
Capacitance
[4]
Parameter
C
IN
: Addresses
C
IN
: Controls
C
OUT
Output Capacitance
Description
Input Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
Max.
5
6
6
Unit
pF
pF
pF
AC Test Loads and Waveforms
R1 317Ω
3.3V
OUTPUT
C
L
INCLUDING
JIG AND
SCOPE
Equivalent to:
THÉVENIN EQUIVALENT
167Ω
OUTPUT
1.73V
R2
351Ω
3.0V
10%
GND
≤
3 ns
ALL INPUT PULSES
90%
90%
10%
≤
3 ns
C1399–4
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
3
CYPRESS [ CYPRESS SEMICONDUCTOR ]
