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HBN2444S6R 参数 Datasheet PDF下载

HBN2444S6R图片预览
型号: HBN2444S6R
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面型晶体管(双晶体管) [Low Vcesat NPN Epitaxial Planar Transistor (Dual Transistors)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 182 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE = 3V
Spec. No. : C223S6-R
Issued Date : 2005.06.29
Revised Date :
Page No. : 3/5
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCE(SAT) @ IC=20IB
100
VCE = 1V
10
VCE(SAT) @ IC=10IB
10
1
10
100
Collector Current---IC(mA)
1000
1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
On Voltage vs Collector Current
On Voltage---(mV)
VBE(SAT) @ IC=10IB
VBE(ON) @ VCE=1V
100
1
10
100
Collector Current---IC(mA)
1000
100
1
10
100
Collector Current---IC(mA)
1000
Power Derating Curves
250
Power Dissipation---PD(mW)
200
Dual
150
100
50
0
0
50
100
Single
150
200
Ambient Temperature---TA(℃)
HBN2444S6R
CYStek Product Specification