CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25
°C
Continuous Drain Current @T
C
=100
°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=-20A, R
G
=25Ω
T
A
=25
°C
Power Dissipation
T
A
=100
°C
Operating Junction and Storage Temperature Range
Note : 1.Pulse width limited by maximum junction temperature.
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 2/6
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
P
D
Tj ; Tstg
Limits
-30
±25
-12
-9
-48
-20
20
3
1.5
-55~+175
Unit
V
V
A
A
A
A
mJ
W
W
°C
Electrical Characteristics
(Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
(Note 1&2)
t
r
(Note 1&2)
t
d(OFF)
(Note 1&2)
t
f
(Note 1&2)
Qg(V
GS
=10V)
(Note 1&2)
Qg(V
GS
=5V)
(Note 1&2)
Qgs
(Note 1&2)
Qgd
(Note 1&2)
-
-
-
-
-
-
-
-
-
-
-
6375
1612
1481
26
22
75
15
56
40
15
18
-
-
-
-
-
-
-
-
-
-
-
pF
-30
-1
-
-
-
-12
-
-
-
-
-1.5
-
-
-
-
12
17
28
-
-3
±100
-1
-10
-
14
21
-
V
V
nA
μA
μA
A
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±25V, V
DS
=0
V
DS
=-24V, V
GS
=0
V
DS
=-20V, V
GS
=0, Tj=125°C
V
DS
=-5V, V
GS
=-10V
I
D
=-12A, V
GS
=-10V
I
D
=-9A, V
GS
=-5V
V
DS
=-5V, I
D
=-12A
(Note 1)
(Note 1)
(Note 1)
V
DS
=-15V, V
GS
=0, f=1MHz
V
DS
=-15V, I
D
=-1A,
V
GS
=-10V, R
G
=2.7
Ω
ns
nC
V
DS
=-15V, I
D
=-10A,
V
GS
=-10V,
MTB14P03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
