欢迎访问ic37.com |
会员登录 免费注册
发布采购

MTB14P03Q8 参数 Datasheet PDF下载

MTB14P03Q8图片预览
型号: MTB14P03Q8
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 178 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号MTB14P03Q8的Datasheet PDF文件第1页浏览型号MTB14P03Q8的Datasheet PDF文件第2页浏览型号MTB14P03Q8的Datasheet PDF文件第4页浏览型号MTB14P03Q8的Datasheet PDF文件第5页浏览型号MTB14P03Q8的Datasheet PDF文件第6页  
Spec. No. : C452Q8  
Issued Date : 2009.05.13  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/6  
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Source-Drain Diode  
IS  
-
-
-
-
-
-
-
-
52  
60  
-3.6  
-14.4  
-1.2  
-
A
ISM(Note 3)  
VSD(Note 1)  
trr  
V
ns  
nC  
IF=IS, VGS=0V  
IF=IS, dIF/dt=100A/μs  
Qrr  
-
Note : 1.Pulse Test : Pulse Width 300μs, Duty Cycle2%  
2.Independent of operating temperature  
3.Pulse width limited by maximum junction temperature  
Thermal Resistance Ratings  
Thermal Resistance  
Symbol  
RθJC  
Typical  
Maximum  
Unit  
Junction-to-Case  
25  
50  
°C / W  
Junction-to-Ambient (Note)  
RθJA  
Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.  
MTB14P03Q8  
CYStek Product Specification