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MTN2302V3 参数 Datasheet PDF下载

MTN2302V3图片预览
型号: MTN2302V3
PDF下载: 下载PDF文件 查看货源
内容描述: 20V N沟道增强型MOSFET [20V N-CHANNEL Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 398 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
10
4.5V
3.5V
3V
2.5V
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 3/9
Typical Output Characteristics
10
4.5V
3.5V
3V
2.5
VG=2V
TA=25℃
8
ID, Drain Current-(A)
VG=2V
TA=150℃
8
ID,Drain Current-(A)
6
6
4
VG=1.5V
4
2
2
VG=1.5V
0
0
0.5
1
1.5
VDS,Drain-to-Source Voltage(V)
2
0
0
0.5
1
1.5
VDS, Drain-to-Source Voltage(V)
2
On-Resistance vs Gate Voltage
100
90
80
RDSON(mΩ)
70
TA=150
60
50
40
30
20
10
2
3
4
5
6
VGS,Gate-to-Source Voltage (V)
7
8
0.6
-50
1.8
Normalized On-Resistance vs Junction Temperature
ID=3.1A
1.6
Normalized RDSON(mΩ)
1.4
1.2
1.0
0.8
ID=3.6A
VG=4.5V
TA=25
0
50
100
Tj, Junction Temperature(℃)
150
Forward Characteristics of Reverse Diode
10000
1.4
Gate Threshold Voltage vs Junction Temperature
IF, Forward Current(mA)
1000
150℃
25℃
VGS(th) (V)
1.0
100
0.6
10
100
0.2
200
300 400 500 600 700 800
VSD, Source to Drain Voltage(mV)
900
1000
-50
0
50
100
Tj, Junction Temperature(℃)
150
MTN2302V3
CYStek Product Specification